Details

Received modulated infrared signal and converts into electrical signal.

Features

• Photodetector and preamplifier circuit in the same casing.
• Receives and amplifies the infrared signal without any external component.
• 5 V output (active at level 0).
• 38 kHz integrated oscillator.
• High sensitivity.
• High level of immunity to ambient light.
• Improved shielding against electrical field interference.
• TTL and CMOS compatibility.
• Applications: infrared remote control.

Technical specification

Supply: 5 V
Power consumption: 0.4 to 1.0 mA
Min. Ee irradiation: 0.35 mW/m2 typ.
Angle of detection: 90
Dimensions of the casing (mm): 12.5 x 10 x Thickness 5.8
Temperature range: -25 C to +85 C